[1]
Wahyuningsih, E., Pratiwi, G. and Arifin, T. 2026. 45-nm feasibility A Comprehensive Review of SRAM Design Using Modified Gate Diffusion Input (MGDI). JURNAL INFOTEL. 18, 1 (May 2026), 142-156. DOI:https://doi.org/10.20895/infotel.v18i1.1450.