1.
Wahyuningsih E, Pratiwi G, Arifin T. 45-nm feasibility A Comprehensive Review of SRAM Design Using Modified Gate Diffusion Input (MGDI). INFOTEL [Internet]. 3May2026 [cited 16Jun.2026];18(1):142-56. Available from: https://ejournal.ittelkom-pwt.ac.id/index.php/infotel/article/view/1450